www.microsemi.com santa ana division data sheet # msc1362 updated: december 1999 2830 south fairview street, santa ana, ca 92704 usa (714)979.8220 fax (714)557.5989 1N6711B maximum raitings @ 25 o c features passivated mesa structure for very low leakage currents hermetically sealed, low profile ceramic surface mount power package low package inductance very low thermal resistance screening available to equivalent jan(tx, txv, s) level according to mil-prf 19500 available as standard polarity (strap-to-anode: 1N6711B) and reverse polarity (strap-to-cathode: 1N6711Br) surface mount rectifier 200 volts 50 amps 5 usec description symbol max unit peak repetitive reverse voltage vrrm 200 volts working peak reverse voltage vrwm 200 volts dc blocking voltage vr 200 volts average rectified forward current, tc if(ave) 50 amps nonrepetitive peak surge current, tp= 8.3 ms, half-sinewave ifsm 375 amps junction temperature range tj -65 to +175 c storage temperature range tstg -65 to +175 c thermal resistance, junction to case: theta jc 0.65 c/w mechanical outline slugger? 1 (do-217aa) preliminary
www.microsemi.com data sheet # msc1362 updated: december 1999 2830 south fairview street, santa ana, ca 92704 usa (714)979.8220 fax (714)557.5989 santa ana division electrical characteristics @ 25 o c unless otherwise specified 1N6711B preliminary description symbol conditions min typ. max unit reverse (leakage) current ir25 vr= rated vr, tc= 25c 0.50 10 ua ir125 vr= rated vr, tc= 125c 0.15 1 ma forward voltage vf1 if= 1 a, tc= 25c 0.65 - v pulse test, vf2 if= 10 a, tc= 25c 0.81 0.89 v pw= 300 us, d/c < 2% vf3 if= 30 a, tc= 25c 0.92 1.00 v vf4 if= 50 a, tc= 25c 0.98 1.10 v vf5 if= 1 a, tc= 125c 0.48 - v vf6 if= 10 a, tc= 125c 0.68 0.79 v vf7 if= 30 a, tc= 125c 0.82 - v vf8 if= 50 a, tc= 125c 0.90 1.05 v vf9 if= 1 a, tc= -55c 0.80 - v vf10 if= 10 a, tc= -55c 0.92 1.00 v vf11 if= 30 a, tc= -55c 1.00 - v vf12 if= 50 a, tc= -55c 1.05 1.20 v temperature coefficient of forward voltage dvf/dt if= 1 a (-55c to 125c, ave.) 1.80 mv/c if= 10 a (-55c to 125c, ave) 1.35 mv/c if= 30 a (-55c to 125c, ave) 1.00 mv/c junction capacitance cj1 vr= 10 vdc 350 500 pf vr= 5 vdc 440 pf breakdown voltage bvr ir= 100 ua, tc= 25c 100 200 v reverserecoverytime trr if=.5a,ir=1a,irr=.25a 2 5 us
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